BCR08PN
Infineon TechnologiesGermany

BCR08PN

Single, Pre-Biased Bipolar Transistors
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Technical parameters

Power
IC-最大集电极电流0.1A
VCEO-CE结击穿电压50V
AC and DC characteristics
fT-变换频率170MHZ
Hfe-最小直流增益70
Environment and package
封装类型1SOT-363
最大工作温度150℃
Other
引脚数量16

Documents

DatasheetDatasheet · 527.8 KB · 2026-09-22Package DrawingPackage Drawing · 469.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 376.2 KB · 2026-09-22EnvironmentalEnvironmental · 27.3 KB · 2026-09-22
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