All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 1A |
| VCEO-CE结击穿电压 | 30V |
| VCEO-集射级击穿电压 | 30V |
| AC and DC characteristics | |
| fT-变换频率 | 200MHZ |
| hFE-最小直流增益 | 30 |
| Hfe-最小直流增益 | 30 |
| Environment and package | |
| 封装类型1 | TO92 |
| Other | |
| VCE(sat)-CE结饱和压降 | 1V |
| VCE(sat)-集射级饱和压降 | 1V |
| 引脚数量1 | 3 |
Documents
No documents are linked to this part yet.