BORN(伯恩半导体)China

BAV99-C

ActiveSwitching Diodes
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Technical parameters

IF (mA)200
IR(max)(µA)2.5
IR@VR(V)70
Trr（ns）6
VF@IF(mA)150
VF(max)(V)1.25
VR(V)70

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DatasheetDatasheet · 763.0 KB · 2026-09-23
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