CBI(创基)China

BAS19W

Switching Diodes

硅外延平面高压开关二极管，SOT - 323塑料封装

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Technical parameters

Key specs

Reverse voltage120 V
Average rectified current200 mA
Power
整流电流200mA
Other
二极管配置1个独立式
直流反向耐压(Vr)120V
耗散功率(Pd)250mW

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