Vishay General Semiconductor - Diodes DivisionUnited States
BRIDGE RECT 1P 125V 900MA DFM
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Technical parameters
Key specs
Reverse voltage125 V
Average rectified current900 mA
Forward voltage1 VMax · 900 mA
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | 900 mA |
| Current - Reverse Leakage @ Vr | 10 µA @ 125 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 900 mA |
| Voltage - Peak Reverse (Max) | 125 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C~125°C(TJ) |
| Package | Tube |
| Package / Case | 4-EDIP (0.300", 7.62mm) |
| Supplier Device Package | DFM |
| Other | |
| Base Product Number | B80 |
| Diode Type | Single Phase |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Active |
| Series | - |
| Technology | Standard |