VBsemi(微碧半导体)China
AUIRFR4105ZTRPBF-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,60V；58A；RDS(ON)=10mΩ@VGS=10V,VGS=20V；Vth=1~3V；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current58 A
On-resistance10 mΩMax · 10V
Gate threshold voltage3 VMax · 250uA
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 58A |
| 阈值电压(Vgs(th)) | 3V@250uA |
| Other | |
| 导通电阻(RDS(on)) | 10mΩ@10V |