VBsemi(微碧半导体)China
AUIRFR4105Z-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO252；N—Channel沟道；60V；58A；RDS(ON)=10(mΩ)@VGS=10V,VGS=±20VVth=2.5V；采用Trench技术
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current58 A
On-resistance13 mΩMax · 4.5V
Gate threshold voltage3 VMax · 250uA
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 58A |
| 阈值电压(Vgs(th)) | 3V@250uA |
| Other | |
| 导通电阻(RDS(on)) | 13mΩ@4.5V |