Vishay General Semiconductor - Diodes DivisionUnited States
DIODE AVALANCHE 800V 1.3A TO277A
All alternatives
View full report2 alternatives on file. Sign in to view them.
Technical parameters
Key specs
Reverse voltage800 V
Average rectified current1.3 A
Forward voltage2.5 VMax · 2 A
TypeFast recoveryFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.3A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 2.5 V @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Other | |
| Base Product Number | AU2 |
| Capacitance @ Vr, F | 29pF @ 4V, 1MHz |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | eSMP® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Avalanche |
Documents
No documents are linked to this part yet.