ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
N沟道,20V,6.5A,22mΩ@4.5V(带ESD保护功能)
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current6.5 A
On-resistance34 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 6.5A |
| Other | |
| 导通电阻(RDS(on)) | 34mΩ@1.8V |
| 耗散功率(Pd) | 1.4W |