ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
P沟道,-60V,-1.6A,250mΩ@-10V
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current1.7 A
On-resistance270 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 1.7A |
| Other | |
| 导通电阻(RDS(on)) | 270mΩ@4.5V |
| 耗散功率(Pd) | 1W |