Microsemi CorporationUnited States
BRIDGE RECT 1P 1.2KV 20A SOT227
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Technical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current20 A
Forward voltage1.8 VMax · 20 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Voltage - Peak Reverse (Max) | 1.2 kV |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Other | |
| Base Product Number | APT20DC120 |
| Diode Type | Single Phase |
| Mfr | Microsemi Corporation |
| Product Status | Active |
| Series | - |
| Technology | Silicon Carbide Schottky |
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