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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current500 mA
On-resistance550 mΩMax · 500mA
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)280mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89-3
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds45 pF @ 10 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs550mOhm @ 500mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

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