VBsemi(微碧半导体)China
AO5401E-VB
Transistors - FETs, MOSFETs - SingleSC75-3；P—Channel沟道,-20V；-0.55A；RDS(ON)=450mΩ@VGS=4.5V,VGS=12V；Vth=-0.4~-1V；
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current550 mA
On-resistance600 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 550mA |
| Other | |
| 导通电阻(RDS(on)) | 600mΩ@1.8V |
| 耗散功率(Pd) | 190mW |