VBsemi(微碧半导体)China
AO4485&-20-VB
Transistors - FETs, MOSFETs - SingleSOP8；P—Channel沟道,-40V；-16.1A；RDS(ON)=10mΩ@VGS=10V,VGS=20V；Vth=-1.2~-2.5V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current10.2 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 40V |
| 连续漏极电流(Id) | 10.2A |
| Other | |
| 数量 | 1个P沟道 |
| 耗散功率(Pd) | 4W |