BORN(伯恩半导体)China
1个N沟道 耐压:30V 电流:5.5A
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current5.5 A
On-resistance30 mΩMax · 10V
Gate threshold voltage2.5 VMax · 250uA
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.5A |
| 阈值电压(Vgs(th)) | 2.5V@250uA |
| Other | |
| 导通电阻(RDS(on)) | 30mΩ@10V |