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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-30 V
Continuous drain current-4 AMax -4 A (TA=25°C),Max -3.2 A (TA=70°C)
On-resistance50 mΩMax · Max 50 mΩ (VGS=-10V,ID=-4.0A)
Gate threshold voltage-1.3 VMax · Max -1.3 V (VDS=VGS,ID=-250μA)

Datasheet-verified parameters

28 items
ParameterValue and test conditionsSource
ChannelP-Channel
Drain-Source VoltageMax -30 V
Continuous Drain CurrentMax -4 A (TA=25°C), Max -3.2 A (TA=70°C)
Static Drain-Source On-ResistanceTyp 41 mΩ, Max 50 mΩ (VGS=-10V, ID=-4.0A)
Gate Threshold VoltageMin -0.5 V, Typ -0.9 V, Max -1.3 V (VDS=VGS, ID=-250μA)
PackageSOT23
Junction and Storage Temperature Range-55 to 150 °C
Gate-Source VoltageMax ±12 V
Pulsed Drain CurrentMax -27 A
Power DissipationMax 1.4 W (TA=25°C), Max 0.9 W (TA=70°C)
Drain-Source Breakdown VoltageMin -30 V (ID=-250μA, VGS=0V)
Zero Gate Voltage Drain CurrentMax -1 μA (VDS=-30V, VGS=0V, TJ=25°C), Max -5 μA (TJ=55°C)
Gate-Body leakage currentMax ±100 nA (VDS=0V, VGS=±12V)
On state drain currentMin -27 A (VGS=-10V, VDS=-5V)
Forward TransconductanceTyp 17 S (VDS=-5V, ID=-4.0A)
Diode Forward VoltageTyp -0.7 V, Max -1 V (IS=-1A, VGS=0V)
Maximum Body-Diode Continuous CurrentMax -2 A
Input CapacitanceTyp 645 pF (VGS=0V, VDS=-15V, f=1MHz)
Output CapacitanceTyp 80 pF (VGS=0V, VDS=-15V, f=1MHz)
Reverse Transfer CapacitanceTyp 55 pF (VGS=0V, VDS=-15V, f=1MHz)
Gate resistanceMin 4 Ω, Typ 7.8 Ω, Max 12 Ω (VGS=0V, VDS=0V, f=1MHz)
Total Gate ChargeTyp 14 nC (VGS=-10V, VDS=-15V, ID=-4.0A)
Turn-On Delay TimeTyp 6.5 ns (VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω)
Turn-On Rise TimeTyp 3.5 ns (VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω)
Turn-Off Delay TimeTyp 41 ns (VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω)
Turn-Off Fall TimeTyp 9 ns (VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω)
Body Diode Reverse Recovery TimeTyp 11 ns (IF=-4.0A, di/dt=100A/μs)
Body Diode Reverse Recovery ChargeTyp 3.5 nC (IF=-4.0A, di/dt=100A/μs)
All parameters (21)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Power Dissipation (Max)1.4W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case3-SMD, SOT-23-3 Variant
Supplier Device PackageSOT-23-3
Other
Base Product NumberAO3401
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs44mOhm @ 4.3A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.3V @ 250µA

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