YTL(亚特联)China
N沟道MOSFET，高密单元设计，低导通电阻，适用于负载/电源开关和接口开关
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current5.8 A
On-resistance31 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.8A |
| Other | |
| 导通电阻(RDS(on)) | 31mΩ@10V |
| 数量 | 1个N沟道 |
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