JSMSEMI(杰盛微)China
便携式设备，使用高电池密度，先进的沟槽技术，适合于低压应用以及低在线功率损耗
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current5.8 A
On-resistance52 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.8A |
| Other | |
| 导通电阻(RDS(on)) | 52mΩ@2.5V,4A |
| 耗散功率(Pd) | 1.4W |
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