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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current40 mA
On-resistance500 ΩMax · 16mA
Gate threshold voltage3.2 VMax · 8μA
Power
Current - Continuous Drain (Id) @ 25°C40mA (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.39W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23A-3
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs500Ohm @ 16mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.2V @ 8µA

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