ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
600V N沟道功率MOSFET,电流:8A,耐压:600V 停产
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current8 A
On-resistance1.2 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 600V |
| 连续漏极电流(Id) | 8A |
| Other | |
| 导通电阻(RDS(on)) | 1.2Ω@10V |
| 数量 | 1个N沟道 |