Comchip TechnologyTaiwan, China
MOSFET N-CH 20V 4.9A SOT23
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current4.9 A
On-resistance31 mΩMax · 5A
Gate threshold voltage1.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Other | |
| Base Product Number | ACMSN2312 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 8 V |
| Mfr | Comchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
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