Vishay General Semiconductor - Diodes DivisionUnited States
DIODE SCHOTTKY 100V 8A TO263AB
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Technical parameters
Key specs
Reverse voltage100 V
Average rectified current8 A
Forward voltage720 mVMax · 8 A
TypeSchottkyFast Recovery =< 500ns,> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 550 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 720 mV @ 8 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Other | |
| Base Product Number | 8TQ100 |
| Capacitance @ Vr, F | - |
| Diode Type | Schottky |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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