KIAChina
IC MOSFET DUAL N-CH 20V 5A SOT-23-6
KIA 8205A is a 20V 5A N-channel enhancement-mode MOSFET featuring advanced trench technology and low on-resistance, ideal for Li-ion battery pack applications.Checked against the datasheet
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 VMin 20 V (VGS=0V，ID=250uA)
Continuous drain current5 A5 A (TA=25°C)
On-resistance25 mΩMax · Max 25.0 mΩ (VGS=10V，ID=5.0A)
Gate threshold voltage1 VMax · Max 1 V (VGS=VGS，ID=250uA)
Datasheet-verified parameters
17 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Channel | N-Channel | |
| Drain-Source Breakdown Voltage | Min 20 V (VGS=0V, ID=250uA) | |
| Continuous Drain Current | 5 A (TA=25°C) | |
| Drain-Source On-State Resistance | Typ 20.0 mΩ, Max 25.0 mΩ (VGS=10V, ID=5.0A) | |
| Gate Threshold Voltage | Min 0.5 V, Typ 0.75 V, Max 1 V (VGS=VGS, ID=250uA) | |
| Operating Junction and Storage Temperature Range | -55 to 150 °C |
All parameters (7)
| Power | |
|---|---|
| Continuous Drain Current | 5 A |
| Drain-Source Voltage | 20 V |
| Gate-Source Voltage | ±12 V |
| Gate Threshold Voltage | 1 V (Max) |
| Maximum Power Dissipation | 2 W |
| Environment and package | |
| Operating Junction and Storage Temperature Range | -55 to 150 °C |
| Other | |
| Drain-Source On-State Resistance | 25.0 mΩ (Max) |
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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.