JSMSEMI(杰盛微)China
高密度电池设计，可实现极低的RDS。
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current9 A
On-resistance75 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 9A |
| Other | |
| 导通电阻(RDS(on)) | 75mΩ@1.8V |
| 数量 | 2个N沟道 |
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