VBsemi(微碧半导体)China
SOT23；P—Channel沟道,-100V；-1.5A；RDS(ON)=500mΩ@VGS=10V,VGS=20V；Vth=-2.5V；
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Key specs
ChannelP-channel
Drain-source voltage100 V
Continuous drain current1.5 A
On-resistance560 mΩMax · 6V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 1.5A |
| Other | |
| 导通电阻(RDS(on)) | 560mΩ@6V |
| 数量 | 1个P沟道 |