Goford SemiconductorTaiwan, China
N200V,RD(MAX)<250M@10V,RD(MAX)<3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current9 A
On-resistance250 mΩMax · 1A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 83W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| Mfr | Goford Semiconductor |
| Packaging | Tube |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |