HL(富海微)China
MOSFET类型:N 漏源电压(Vdss) (V): 60阈值电压VGS:±20V th(V):1～2.5导通电阻RDS(ON) (mΩ):40-45 连续漏极电流ID(A):5A
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Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current5 A
On-resistance49 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 5A |
| Other | |
| 导通电阻(RDS(on)) | 49mΩ@10V |
| 数量 | 1个N沟道 |