onsemiUnited States

5LN01M-TL-H

MOSFET N-CH 50V 100MA 3MCP

All alternatives

ChannelN-channel

Drain-source voltage50 V

Continuous drain current100 mA

On-resistance7.8 ΩMax · 50mA

Power
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Power Dissipation (Max)	150mW (Ta)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	150°C(TJ)
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case	SC-70, SOT-323
Supplier Device Package	MCP
Other
Base Product Number	5LN01
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6.6 pF @ 10 V
Mfr	onsemi
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	7.8Ohm @ 50mA, 4V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	-

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