Analog Devices Inc.United States

4392DFN 8L ROHS

JFETs
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Technical parameters

Power
栅源击穿电压(V(BR)GSS)40V
栅源截止电压(VGS(off))2V@10nA
Other
FET类型1个N沟道
耗散功率(Pd)300mW

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