Analog Devices Inc.United States
3N170 TO-72 4L
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage25 V
Continuous drain current30 mA
On-resistance200 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 25V |
| 连续漏极电流(Id) | 30mA |
| Other | |
| 导通电阻(RDS(on)) | 200Ω@10V,100uA |
| 数量 | 1个N沟道 |