Linear Integrated Systems, Inc.United States

3N163 SOT-143 4L ROHS

ActiveTransistors - FETs, MOSFETs - SingleSOT-143-4

P-CHANNEL, SINGLE ENHANCEMENT MO

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage40 V
Continuous drain current50 mA
On-resistance250 ΩMax · 100μA
Gate threshold voltage5 VMax · 10μA
Power
Current - Continuous Drain (Id) @ 25°C50mA
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)20V
Power Dissipation (Max)350mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143-4
Other
Base Product Number3N163
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds3.5 pF @ 15 V
MfrLinear Integrated Systems, Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs250Ohm @ 100µA, 20V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-6.5V
Vgs(th) (Max) @ Id5V @ 10µA

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