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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current150 mA
On-resistance3.7 ΩMax · 80mA
Power
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Power Dissipation (Max)150mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / CaseSC-75, SOT-416
Supplier Device PackageSMCP
Other
Base Product Number3LN01
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7 pF @ 10 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.7Ohm @ 80mA, 4V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id-

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