Goford SemiconductorTaiwan, China
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current5.6 A
On-resistance59 mΩMax · 2.8A
Gate threshold voltage1.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.6A |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 1.4W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.8A, 2.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
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