KTP(科泰普)China
30N06-KTP
Transistors - FETs, MOSFETs - SingleN沟道，VDSS= 60V,ID=30A，RDS(on) : 0.03 Ω (Max) @VG=10V
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current30 A
On-resistance30 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 30A |
| Other | |
| 导通电阻(RDS(on)) | 30mΩ@10V |
| 耗散功率(Pd) | 45W |