PACKAGE DIMENSIONS in millimet…
NEC CorporationJapan
TRANSISTOR NPN 12V 100MA 3PINS ULTRA SUPER MINI MOLD
NPN silicon epitaxial transistor, VCEO 12V, IC 100mA, PT 125mW, 3-pin Ultra Super Mini Mold package, designed for low noise and small signal amplifiers from VHF to UHF band.Checked against the datasheet
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Technical parameters
Key specs
TypeNPN
Collector-emitter voltage12 V
Collector current100 mAMax
DC current gain80 ~ 160Max 160 (VCE = 3 V，IC = 7 mA)
Power125 mWMax
Datasheet-verified parameters
16 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Type | NPN | |
| Collector to Emitter Voltage | 12 V (Max) | |
| Collector Current | 100 mA (Max) | |
| DC Current Gain | Min 80, Max 160 (VCE = 3 V, IC = 7 mA) | |
| Total Power Dissipation | 125 mW (Max) | |
| Package | 3 PINS ULTRA SUPER MINI MOLD |
All parameters (8)
| Power | |
|---|---|
| Collector Current | 100 mA |
| Collector to Emitter Voltage | 12 V |
| Total Power Dissipation | 125 mW |
| AC and DC characteristics | |
| DC Current Gain | 80 to 160 |
| Gain Bandwidth Product | 4.5 GHz (Typ) |
| Noise Figure | 1.2 dB (Typ) |
| Environment and package | |
| Junction Temperature | 150 °C |
| Package | 3 PINS ULTRA SUPER MINI MOLD |
Pinout and package
Package3 PINS ULTRA SUPER MINI MOLD
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Emitter | ||
| 2 | Base | ||
| 3 | Collector |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.