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Technical parameters

Key specs

TypePNP
Collector-emitter voltage140 V
Collector current12 AMax
DC current gain1001A
Power120 WMax
Power
Current - Collector Cutoff (Max)100µA (ICBO)
Current - Collector (Ic) (Max)12 A
Power - Max120 W
Voltage - Collector Emitter Breakdown (Max)140 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition10MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P-3L
Other
Base Product Number2SB817
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic2V @ 500mA, 5A

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