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Technical parameters

Key specs

TypePNP
Collector-emitter voltage230 V
Collector current15 AMax
DC current gain801A
Power150 WMax
Power
Current - Collector Cutoff (Max)5µA (ICBO)
Current - Collector (Ic) (Max)15 A
Power - Max150 W
Voltage - Collector Emitter Breakdown (Max)230 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Frequency - Transition30MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)
Other
Base Product Number2SA1943
MfrToshiba Semiconductor and Storage
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A

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