onsemiUnited States
PNP SILICON TRANSISTOR
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage400 V
Collector current200 mAMax
DC current gain10050mA
Power1.3 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 200 mA |
| Power - Max | 1.3 W |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | 70MHz |
| Environment and package | |
| Grade | - |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-243AA |
| Qualification | - |
| Supplier Device Package | PCP |
| Other | |
| Mfr | onsemi |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 5mA, 50mA |
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