All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current115 mA
On-resistance13.5 ΩMax · 500mA
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)200mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageStrip
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323
Other
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
MfrDiotec Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs13.5Ohm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Documents