N-CHANNEL SMALL SIGNAL MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current340 mA
On-resistance5 ΩMax · 500mA
Gate threshold voltage2.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 350mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | - |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
| Mfr | HY Electronic (Cayman) Limited |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Series | 2N7002K |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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