Diodes IncorporatedUnited States
Dual N-Channel Enhancement Mode MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| AEC Qualified | Yes |
| Other | |
| C ISS Typ (pF) | 22 @ 25V pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |I DS | @T A = +25°C (A) | 0.23 A |
| P D @T A = +25°C (W) | 0.31 W |
| Polarity | N+N |
| R DS(ON) Max@ V GS (10V) (mΩ) | 13500 mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 7500 @5V mΩ |
| |V DS | (V) | 60 V |
| |V GS(TH) | Max (V) | 2 V |
| |V GS | (±V) | 20 ±V |