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HomeTransistors - FETs, MOSFETs - SingleCJ(江苏长电/长晶)2N7002-G
CJ(江苏长电/长晶)China

2N7002-G

Transistors - FETs, MOSFETs - Single

丝印:7002

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current115 mA
On-resistance7 ΩMax · 5V
Power
漏源电压(Vdss)60V
连续漏极电流(Id)115mA
Other
导通电阻(RDS(on))7Ω@5V,50mA
数量1个N沟道

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DatasheetDatasheet · 1.5 MB · 2026-09-21DatasheetDatasheet · 817.0 KB · 2026-09-21DatasheetDatasheet · 676.4 KB · 2026-09-21DatasheetDatasheet · 566.6 KB · 2026-09-21DatasheetDatasheet · 532.6 KB · 2026-09-21DatasheetDatasheet · 514.8 KB · 2026-09-21DatasheetDatasheet · 505.0 KB · 2026-09-21DatasheetDatasheet · 491.7 KB · 2026-09-21DatasheetDatasheet · 462.8 KB · 2026-09-21DatasheetDatasheet · 460.7 KB · 2026-09-21DatasheetDatasheet · 451.0 KB · 2026-09-21DatasheetDatasheet · 440.4 KB · 2026-09-21DatasheetDatasheet · 439.1 KB · 2026-09-21DatasheetDatasheet · 431.5 KB · 2026-09-21DatasheetDatasheet · 431.4 KB · 2026-09-21DatasheetDatasheet · 406.5 KB · 2026-09-21
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