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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current200 mAMax
DC current gain25010mA
Power1.5 WMax
Power
Current - Collector Cutoff (Max)25nA
Current - Collector (Ic) (Max)200 mA
Power - Max1.5 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 10mA, 5V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA

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