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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 15 V
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id1 V @ 1 nA
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageTape & Reel (TR)
Package / Case4-SMD, No Lead
Supplier Device PackageUA
Other
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds27pF @ 15V
MfrMicrochip Technology
Product StatusActive
Resistance - RDS(On)175 Ohms
Series-

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