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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)90 mA @ 18 V
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id10 V @ 1 nA
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / Case3-SMD, No Lead
Supplier Device PackageUB
Other
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25pF @ 15V
MfrMicrochip Technology
Product StatusDiscontinued at Digi-Key
Resistance - RDS(On)75 Ohms
SeriesMilitary, MIL-PRF-19500

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