Microchip TechnologyUnited States
P CHANNEL JFET
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 90 mA @ 18 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 nA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 (TO-206AA) |
| Other | |
| Base Product Number | 2N5114 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Resistance - RDS(On) | 75 Ohms |
| Series | Military, MIL-PRF-19500 |
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