Analog Devices Inc.United States

2N5114 TO-18 3L ROHS

JFETs

单通道P沟道结型场效应管开关，低导通电阻，低电容

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Technical parameters

Power
栅源击穿电压(V(BR)GSS)30V
Other
FET类型1个P沟道
导通电阻(RDS(on))75Ω
耗散功率(Pd)500mW

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