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Technical parameters

Power
Current Drain (Id) - Max250 pA
Current - Drain (Idss) @ Vds (Vgs=0)50 mA @ 15 V
Drain to Source Voltage (Vdss)30 V
Power - Max360 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id10 V @ 500 pA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18
Other
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds10pF @ 10V (VGS)
MfrCentral Semiconductor Corp
Product StatusActive
Resistance - RDS(On)25 Ohms
Series-

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