2N4427
Central Semiconductor CorpUnited States

2N4427

ObsoleteTransistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 500MHZ TO39

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Technical parameters

Power
Current - Collector (Ic) (Max)400mA
Power - Max1W
Voltage - Collector Emitter Breakdown (Max)20V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 100mA, 5V
Frequency - Transition500MHz
Gain10dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN

Documents

DatasheetDatasheet · 868.1 KB · 2026-09-21DatasheetDatasheet · 868.1 KB · 2026-09-21Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 297.5 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 170.3 KB · 2026-09-22EnvironmentalEnvironmental · 106.0 KB · 2026-09-22PCN & ErrataPCN & Errata · 80.8 KB · 2026-09-22
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