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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current800 mAMax
DC current gain100150mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)800 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition250MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18
Other
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA

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